mbr1530ctmbr1560ct vishay liteon power semiconductor rev. a2, 24-jun-98 1 (5) 15a schottky barrier rectifier features schottky barrier chip guard ring die constuction for transient protection low power loss, high efficiency high current capability and low forward voltage drop high surge capability for use in low voltage, high frequency inverters, free wheeling, and polarity protection application plastic material ul recognition flammability classification 94v0 95 9630 absolute maximum ratings t j = 25 c parameter test conditions type symbol value unit repetitive peak reverse voltage mbr1530ct v rrm 30 v g =working peak reverse voltage dc bl ki lt mbr1535ct rrm =v rwm v 35 v =dc blocking voltage mbr1540ct =v r 40 v MBR1545CT 45 v mbr1550ct 50 v mbr1560ct 60 v peak forward surge current i fsm 150 a average forward current t c =125 c i fav 15 a junction and storage temperature range t j =t stg 65...+150 c
mbr1530ctmbr1560ct vishay liteon power semiconductor rev. a2, 24-jun-98 2 (5) electrical characteristics t j = 25 c parameter test conditions type symbol min typ max unit forward voltage i f =7.5a, t c =125 c mbr1530ct v f 0.57 v g i f =15a, t c =25 c MBR1545CT v f 0.84 v i f =15a, t c =125 c v f 0.72 v i f =7.5a, t c =125 c mbr1550ct v f 0.65 v i f =15a, t c =25 c mbr1560ct v f 0.90 v i f =15a, t c =125 c v f 0.80 v reverse current t c =25 c mbr1530ct i r 0.1 ma t c =125 c MBR1545CT i r 15 ma t c =25 c mbr1550ct i r 1.0 ma t c =125 c mbr1560ct i r 50 ma diode capacitance v r =4v, f=1mhz c d 300 pf thermal resistance junction to case t l =const. r thjc 1.7 k/w voltage rate of change ( rated v r ) mbr1530ct mbr1540ct dv/dt 1000 k/w ( r ) MBR1545CT mbr1560ct dv/dt 10000 k/w characteristics (t j = 25 c unless otherwise specified) 0 4 8 0 50 100 150 12 16 20 15341 t amb ambient temperature ( c ) i average forward current ( a ) fav figure 1. max. average forward current vs. ambient temperature 0.1 1.0 10 50 0.2 0.4 0.6 0.8 1.0 i f pulse width = 300 m s t j = 25 c 2% duty cycle 15342 i forward current ( a ) f v f forward voltage ( v ) mbr1530 mbr1545 mbr1550 mbr1560 figure 2. typ. forward current vs. forward voltage
mbr1530ctmbr1560ct vishay liteon power semiconductor rev. a2, 24-jun-98 3 (5) 0 50 100 150 200 250 300 1 10 100 i peak forward surge current ( a ) fsm number of cycles at 60 hz 15343 figure 3. max. peak forward surge current vs. number of cycles 100 1000 4000 0.1 1.0 10 100 c diode capacitance ( pf ) d v r reverse voltage ( v ) 15344 f = 1 mhz t j = 25 c vsig = 50mv pp figure 4. typ. diode capacitance vs. reverse voltage 0.001 0.01 0.1 1.0 10 0 20 40 60 80 100 120 140 percent of rated peak reverse voltage (%) i reverse current ( ma ) r 15345 t j = 75 c t j = 25 c t j = 125 c t j = 150 c figure 5. typ. reverse current vs. percent of rated peak reverse voltage
mbr1530ctmbr1560ct vishay liteon power semiconductor rev. a2, 24-jun-98 4 (5) dimensions in mm 14468 case: molded plastic polarity: as marked on body approx. weight: 2.24 grams mounting position: any marking: type number
mbr1530ctmbr1560ct vishay liteon power semiconductor rev. a2, 24-jun-98 5 (5) ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( odss ). the montreal protocol ( 1987 ) and its london amendments ( 1990 ) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2 . class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency ( epa ) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c ( transitional substances ) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay-telefunken products for any unintended or unauthorized application, the buyer shall indemnify vishay-telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 ( 0 ) 7131 67 2831, fax number: 49 ( 0 ) 7131 67 2423
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